Nag, B. R. ; Robson, P. N. (1973) Calculation on hot-electron noise in semiconductors Physics Letters A, 43 (6). pp. 507-508. ISSN 0375-9601
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/037596...
Related URL: http://dx.doi.org/10.1016/0375-9601(73)90015-7
Abstract
Under hot-electron conditions, noise arises both from fluctuations in the carrier velocity and the carrier collision time. The magnitudes of these two contributions are calculated by the Monte-Carlo method for InSb at 77°K.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 28706 |
| Deposited On: | 15 Dec 2010 11:41 |
| Last Modified: | 08 Jun 2011 08:45 |
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