Electron mobility in indium nitride

Nag, B. R. (2004) Electron mobility in indium nitride Journal of Crystal Growth, 269 (1). pp. 35-40. ISSN 0022-0248

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00220...

Related URL: http://dx.doi.org/10.1016/j.jcrysgro.2004.05.031


Electron mobility in indium nitride is computed for the temperature of 300 and 500 K, taking into account all the scattering mechanisms, degeneracy, screening and the energy-band nonparabolicity. The band gap, effective mass, static dielectric constant and high-frequency dielectric constant are taken as 0.7, 0.05, 11 and 6.7 eV, respectively. The results are significantly different from those obtained earlier. Experimental results may be explained by assuming that the concentration of ionized impurities or charged point defects lie between two and five times the electron concentration.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:B1. Nitrides; B2. Semiconducting III-V Materials
ID Code:28675
Deposited On:15 Dec 2010 11:45
Last Modified:08 Jun 2011 06:51

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