Chattopadhyay, D. ; Nag, B. R. (1977) Hot electron diffusivity in silicon Solid State Communications, 22 (9). pp. 569-571. ISSN 0038-1098
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003810...
Related URL: http://dx.doi.org/10.1016/0038-1098(77)90138-7
Abstract
Hot electron diffusion coefficients in silicon at room temperature are theoretically studied by incorporating the band non-parabolicity and the effect of the diffusion current on the distribution function. Two models of intervalley scattering are considered: in one model, coupling with high-temperature intervalley phonons only is assumed; in the other, low-temperature intervalley phonons are also included. Both the models give practically identical results and the calculated values are found to agree closely with the experiment.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 28664 |
| Deposited On: | 15 Dec 2010 11:46 |
| Last Modified: | 08 Jun 2011 08:23 |
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