Hot electron diffusivity in silicon

Chattopadhyay, D. ; Nag, B. R. (1977) Hot electron diffusivity in silicon Solid State Communications, 22 (9). pp. 569-571. ISSN 0038-1098

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Hot electron diffusion coefficients in silicon at room temperature are theoretically studied by incorporating the band non-parabolicity and the effect of the diffusion current on the distribution function. Two models of intervalley scattering are considered: in one model, coupling with high-temperature intervalley phonons only is assumed; in the other, low-temperature intervalley phonons are also included. Both the models give practically identical results and the calculated values are found to agree closely with the experiment.

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Deposited On:15 Dec 2010 11:46
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