Negative electron diffusivity in high electric fields

Nag, B. R. ; Chattopadhyay, D. (1978) Negative electron diffusivity in high electric fields Solid State Electronics, 21 (1). pp. 303-307. ISSN 0038-1101

Full text not available from this repository.

Official URL: http://linkinghub.elsevier.com/retrieve/pii/003811...

Related URL: http://dx.doi.org/10.1016/0038-1101(78)90152-1

Abstract

The prediction that the electron diffusivity may be negative in high electric fields under some conditions has been examined starting from the Boltzmann equation and assuming a Maxwellian distribution function. It is found that the diffusion constant is positive for predominant acoustic phonon, polar optical phonon or impurity atom scattering. But the constant may be negative when effects of nonparabolicity are important and energy relaxation is limited by non-polar optical phonon scattering but the momentum relaxation is dominated by impurity atom scattering. Calculations with the parameter values of InSb, silicon and germanium show that only in materials like germanium at low temperatures of about 27 K the diffusion constant may be negative for impurity concentrations of 1017-1018 cm-3.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:28651
Deposited On:15 Dec 2010 11:46
Last Modified:08 Jun 2011 08:20

Repository Staff Only: item control page