Nag, B. R. (1993) Characteristics of InAs/AlxGa1-xSb/InAs tunnel diodes Solid State Electronics, 36 (3). pp. 373-379. ISSN 0038-1101
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003811...
Related URL: http://dx.doi.org/10.1016/0038-1101(93)90089-9
Abstract
Current voltage characteristics were studied for the InAs/AlxGa1-xSb/InAs tunnel diodes by considering the conduction band electrons alone. The characteristics were found to be strongly dependent on temperature, doping of the end layers, choice of material constants and more importantly on the boundary conditions for the wave functions at the heterojunction interfaces. The general features of the calculated characteristics are in agreement with experiments and quantitative agreement may also be obtained by adjusting the material parameters.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 28648 |
| Deposited On: | 15 Dec 2010 11:47 |
| Last Modified: | 08 Jun 2011 07:08 |
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