Low-temperature electron mobility in InSb

Nag, B. R. ; Dutta, G. M. (1977) Low-temperature electron mobility in InSb Journal of Applied Physics, 48 (8). pp. 3621-3622. ISSN 0021-8979

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Official URL: http://jap.aip.org/resource/1/japiau/v48/i8/p3621_...

Related URL: http://dx.doi.org/10.1063/1.324171


Available experimental values of electron mobility in InSb samples with known impurity concentration are compared with the theoretical values obtained by an iteration technique including the effects of band nonparabolicity, wave-function admixture, electron screening, and all scattering mechanisms. Experimental values for the temperature range 20-77 K are found to agree to within 10% with the theoretical values. Values for conductivity mobility, the Hall ratio, and magnetoresistance are also given for different impurity concentrations and compensation ratios. These values should be useful for obtaining the impurity concentration from the knowledge of the experimental values of these transport coefficients.

Item Type:Article
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Deposited On:15 Dec 2010 11:48
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