Mobility of electrons in Hg1-xCdxTe

Chattopadhyay, D. ; Nag, B. R. (1974) Mobility of electrons in Hg1-xCdxTe Journal of Applied Physics, 45 (3). pp. 1463-1465. ISSN 0021-8979

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Electron mobility in semiconducting Hg1-xCdxTe at room temperature has been calculated in the range 0.2 ≤ x ≤ 1.0 by an iterative solution of the Boltzmann equation incorporating the two-mode nature of the polar optical scattering and the nonparabolicity of the conduction band. The effects of the deformation potential acoustic, ionized impurity, and electron-hole scattering have also been considered. The calculated results agree with the measured values to within a factor of 2 for x = 0.6 and 0.4, whereas for x = 0.2, 0.8, and 1.0 the agreement is within a factor of 1.4.

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Deposited On:15 Dec 2010 11:49
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