Boundary conditions for the heterojunction interfaces of nonparabolic semiconductors

Nag, B. R. (1991) Boundary conditions for the heterojunction interfaces of nonparabolic semiconductors Journal of Applied Physics, 70 (8). pp. 4623-4625. ISSN 0021-8979

Full text not available from this repository.

Official URL: http://jap.aip.org/resource/1/japiau/v70/i8/p4623_...

Related URL: http://dx.doi.org/10.1063/1.349100

Abstract

Transmission probability curves are presented for InAs/Al0.4Ga0.6Sb/InAs tunnel diodes which show that for a 2-nm-barrier width, negative differential conductance (NDC) is indicated if the velocity effective mass is used to match the derivatives of the wave functions at the heterojunction interfaces, while the use of the energy-effective mass does not indicate an NDC. It is suggested that an experiment with such a diode may resolve the controversy about the effective mass, to be used for matching the derivatives.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:28598
Deposited On:15 Dec 2010 17:20
Last Modified:08 Jun 2011 12:42

Repository Staff Only: item control page