Nag, B. R. (1976) Parallel diffusion constant of hot electrons in silicon Applied Physics Letters, 28 (9). pp. 550-551. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v28/i9/p550_s...
Related URL: http://dx.doi.org/10.1063/1.88819
Abstract
A formula is derived for the parallel diffusion coefficient of hot electrons starting from the diffusion equation derived earlier by the author. Values of the coefficient predicted for silicon from the formula are in excellent agreement with recent experimental results.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 28588 |
| Deposited On: | 15 Dec 2010 11:51 |
| Last Modified: | 08 Jun 2011 08:26 |
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