Band offset in InP/Ga0.47In0.53As heterostructures

Nag, B. R. ; Mukhopadhyay, Sanghamitra (1991) Band offset in InP/Ga0.47In0.53As heterostructures Applied Physics Letters, 58 (10). pp. 1056-1058. ISSN 0003-6951

Full text not available from this repository.

Official URL:

Related URL:


Energy levels in InP/Ga0.47In0.53As quantum wells are calculated after reformulating the energy-dependent effective mass to be used for taking into account the energy-band nonparabolicity of both constituents. The required value of the ratio of the conduction-band and valence-band discontinuities is found to be close to 2/3, in agreement with the value found by other methods. The value of the nonparabolicity factor is also found to be the same as that used in earlier transport studies.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:28582
Deposited On:15 Dec 2010 11:51
Last Modified:08 Jun 2011 07:16

Repository Staff Only: item control page