Nag, B. R. ; Mukhopadhyay, Sanghamitra (1991) Band offset in InP/Ga0.47In0.53As heterostructures Applied Physics Letters, 58 (10). pp. 1056-1058. ISSN 0003-6951
Full text not available from this repository.
Official URL: http://apl.aip.org/resource/1/applab/v58/i10/p1056...
Related URL: http://dx.doi.org/10.1063/1.104421
Abstract
Energy levels in InP/Ga0.47In0.53As quantum wells are calculated after reformulating the energy-dependent effective mass to be used for taking into account the energy-band nonparabolicity of both constituents. The required value of the ratio of the conduction-band and valence-band discontinuities is found to be close to 2/3, in agreement with the value found by other methods. The value of the nonparabolicity factor is also found to be the same as that used in earlier transport studies.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 28582 |
| Deposited On: | 15 Dec 2010 11:51 |
| Last Modified: | 08 Jun 2011 07:16 |
Repository Staff Only: item control page
