Microwave conduction in n-type germanium under hot electron conditions

Abstract

Microwave conduction in n-type germanium in the presence of a high steady electric field is studied The carrier concentration is assumed to be high enough to ensure that intercarrier collisions enforce a Maxwellian distribution on the carriers and the momentum loss by the carriers occurs mainly through scattering due to lattice vibrations. The effect of anisotropic effective mass on the microwave conduction characteristics is discussed, and the anisotropy is found to be small at room temperature Numerical values of microwave conductivity and the change in dielectric constant are found to agree with the experimental results of a 4 68 Ω cm n-type germanium sample, and the best fit with the experimental characteristics is obtained for a value of the optical deformation potential constant D₀ between 0.7 to 0.8 #215; 10⁹ ev cm^-1.