Basu, P. K. ; Nag, B. R. (1969) Room temperature high-field Hall mobility in n-type silicon Journal of Physics C: Solid State Physics, 2 (12). pp. 2396-2401. ISSN 0022-3719
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Official URL: http://iopscience.iop.org/0022-3719/2/12/325
Related URL: http://dx.doi.org/10.1088/0022-3719/2/12/325
Abstract
The high-field Hall mobility of n-type silicon has been studied by assuming Maxwellian distribution function of the carriers in the valleys. Different values of inter-valley coupling constants have been used. It has been found that a good fit to the experimental results for the <111> direction may be obtained by a proper choice of the inter-valley coupling constants. But even then there remain some discrepancies in the detailed characteristics.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics Publishing. |
| ID Code: | 28570 |
| Deposited On: | 15 Dec 2010 11:52 |
| Last Modified: | 08 Jun 2011 08:55 |
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