Gangopadhyay, Samita ; Nag, B. R. (1997) Energy levels in three-dimensional quantum-confinement structures Nanotechnology, 8 (1). pp. 14-17. ISSN 0957-4484
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Official URL: http://iopscience.iop.org/0957-4484/8/1/004
Related URL: http://dx.doi.org/10.1088/0957-4484/8/1/004
Abstract
Energy levels are calculated for three-dimensional (3D) quantum-confinement structures with finite potential barriers. GaAs/Ga0.63AI0.37As, Ga0.47In0.53As/InP and Ga0.47In0.53As/AI0.48In0.52As systems are considered. Analytic results are presented for spherical structures including the effects of nonparabolicity. A numerical method is also presented for the calculation of the energy levels in a 3D quantum-confinement structure in the shape of a cube or a parallelopiped. The method is applied for calculating the energy shift in a cylindrical dot of the GaAs/Ga0.63AI0.37As system.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics Publishing. |
| ID Code: | 28555 |
| Deposited On: | 15 Dec 2010 11:54 |
| Last Modified: | 08 Jun 2011 06:58 |
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