Nag, B. R. ; Das, Madhumita (2003) Low-temperature electron mobility in Ga0.5In0.5P/GaAs quantum wells Nanotechnology, 14 (9). pp. 965-967. ISSN 0957-4484
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Official URL: http://iopscience.iop.org/0957-4484/14/9/305
Related URL: http://dx.doi.org/10.1088/0957-4484/14/9/305
Abstract
The electron mobility is calculated for Ga0.5In0.5P/GaAs quantum wells at 77 K. Deformation potential acoustic phonon and alloy scattering are assumed to be effective. Account has been taken of the energy band nonparabolicity and extension of the wavefunction into the Ga0.5In0.5P barrier layer. Calculated results for Al0.3Ga0.7As/GaAs quantum wells are also presented for comparison.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics Publishing. |
| ID Code: | 28553 |
| Deposited On: | 15 Dec 2010 11:54 |
| Last Modified: | 08 Jun 2011 06:50 |
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