Intervalley scattering mechanism in silicon

Basu, P. K. ; Nag, B. R. (1972) Intervalley scattering mechanism in silicon Physical Review B, 5 (4). pp. 1633-1635. ISSN 0163-1829

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The scattering mechanism in n-Si is discussed in the light of recent works of Folland and of Costato and Reggiani. The temperature variation of the mobility can be explained by using both these models, but the agreement with the Hall and magnetoresistance coefficients is not satisfactory. The same comment applies to the models suggested by Dumke and by Onton. The piezoresistance value calculated with these models is also found to be higher than the experimental value.

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ID Code:28543
Deposited On:15 Dec 2010 11:55
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