Basu, P. K. ; Nag, B. R. (1980) Lattice scattering mobility of a two-dimensional electron gas in GaAs Physical Review B, 22 (10). pp. 4849-4852. ISSN 0163-1829
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Official URL: http://link.aps.org/doi/10.1103/PhysRevB.22.4849
Related URL: http://dx.doi.org/10.1103/PhysRevB.22.4849
Abstract
Theory of electron mobility is presented for a two-dimensional electron gas in a polar material. Calculated values of mobility are given for gallium arsenide for temperatures of 77-300 K and surface electron concentrations of (0.5-1.2) × 1016 m-2. The mobility values are much lower than the bulk values and are also strongly dependent on electron concentration.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 28536 |
| Deposited On: | 15 Dec 2010 11:56 |
| Last Modified: | 08 Jun 2011 07:34 |
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