X-ray diffraction study of stacking faults in a single crystal of 2H SiC

Abstract

The nature of random stacking faults in a heavily disordered single crystal of 2H SiC has been investigated by studying the broadening of X-ray diffraction maxima. The intensity distribution along the 10.l reciprocal lattice row was recorded on a four-circle, computer-controlled single crystal diffractometer. The 10.l reflections with l even were found to be considerably broadened showing that the stacking faults present are predominantly intrinsic faults. Exact expressions for the diffracted intensity and the observable diffraction effects were obtained. The results obtained are compared with those obtained for 2H ZnS crystals.