Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon

Kundaliya, Darshan C. ; Ogale, S. B. ; Dhar, S. ; McDonald, K. F. ; Knoesel, E. ; Osedach, T. ; Lofland, S. E. ; Shinde, S. R. ; Venkatesan, T. (2006) Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon Journal of Magnetism and Magnetic Materials, 299 (2). pp. 307-311. ISSN 0304-8853

[img]
Preview
PDF - Publisher Version
244kB

Official URL: http://linkinghub.elsevier.com/retrieve/pii/S03048...

Related URL: http://dx.doi.org/10.1016/j.jmmm.2005.04.017

Abstract

Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 0 1) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (1 0 0) substrate. The ferromagnetic transition temperature (Tc~215K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ~15°in the ferromagnetic state.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Thin Films; GaFeO3; Moke; Pulsed Laser Deposition; Magnetization
ID Code:26922
Deposited On:08 Dec 2010 13:03
Last Modified:17 May 2016 10:12

Repository Staff Only: item control page