Electron transport in a one-side-modulation-doped single-quantum-well structure: remote-ion-scattering contribution

Abstract

Low-temperature electron mobility limited by remote ionized impurity scattering in a one-side-modulation-doped single-quantum-well structure is calculated employing the memory-function approach. The calculations include self-consistent band-bending effects and the evaluation of quantum states and wave functions. The dynamic response of the quasi-two-dimensionally confined carriers is incorporated via use of an appropriate screening function. The dependence of the mobility on the thickness of the spacer layer, the width of the quantum well, the dopant density, and the electron concentration in the well is examined and interesting features concerning quantum-size effects are brought out for situations of current experimental interest.