Hall effect in cobalt-doped TiO2-δ

Higgins, J. S. ; Shinde, S. R. ; Ogale, S. B. ; Venkatesan, T. ; Greene, R. L. (2004) Hall effect in cobalt-doped TiO2-δ Physical Review B, 69 (7). 073201_1-073201_4. ISSN 0163-1829

Full text not available from this repository.

Official URL: http://prb.aps.org/abstract/PRB/v69/i7/e073201

Related URL: http://dx.doi.org/10.1103/PhysRevB.69.073201


We report Hall effect measurements on thin films of cobalt-doped TiO2-δ. Films with a low carrier concentration (1018-1019/cm3) yield a linear behavior in the Hall data while those having a higher carrier concentration (1021-1022/cm3) display anomalous behavior near zero field. In the entire range of carrier concentrations, n-type conduction is observed.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:26853
Deposited On:08 Dec 2010 13:04
Last Modified:11 Jun 2011 11:08

Repository Staff Only: item control page