Plasma- processed obliquely deposited Bi-Ge-Se and Ag/Bi-Ge-Se films as resist materials

Abstract

Lithographic properties of photoexposed Bi₁₀Ge₂₀Se₇₀ and Ag/Bi₁₀Ge₂₀Se₇₀ films and hydrogen plasma exposed Ag/Bi₁₀Ge₂₀Se₇₀ films have been investigated. The asdeposited films show a positive resist behavior on exposure to photons and the silver overlayered films show a negative resisti behavior on exposure to both photons and hydrogen plasme. The contrast values are 1.25 and 2.3 for photoexposed positive and negative resists, respectively, and 5.0 for plasma-exposed negative resist. The sensitivity is ∼10²⁰ photons/cm² for the photoexposed positive and negative resists and 10¹⁸ ions/cm² (0.11 C/cm²) for the plasma-exposed negative resist.