Electron transport properties of Cu-based alloy films

Chopra, K. L. ; Suri, Ritu ; Thakoor, A. P. (1977) Electron transport properties of Cu-based alloy films Physical Review B, 15 (10). pp. 4682-4692. ISSN 0163-1829

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Official URL: http://prb.aps.org/abstract/PRB/v15/i10/p4682_1

Related URL: http://dx.doi.org/10.1103/PhysRevB.15.4682


The resistivity (ρ), Hall coefficient (RH), temperature coefficient of resistance (TCR), and mobility (μ) of Cu-based alloy films containing 1, 2, and 5 at.% of Al, Ge, and Sn, in the temperature range 80-600 K, have been investigated. The resistivity increases linearly (and the TCR decreases correspondingly) with concentration of the impurities in accordance with Matthiessen's rule. The magnitude as well as the temperature dependence of RH and μ decrease on addition of impurities. At a concentration of 5-at.% Ge and Sn, the temperature dependence of RH is reversed. The addition of 5-at.% Al makes RH independent of temperature. The observed electron transport properties have been explained in terms of scattering behavior of electron and hole states in a mixed conduction mechanism, and distortions in the Fermi surface.

Item Type:Article
Source:Copyright of this article belongs to American Physical Society.
ID Code:23234
Deposited On:25 Nov 2010 13:16
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