Amorphous chalcogenide thin-film Schottky barrier (Bi/As2Se3:Bi) solar cell

Kumar, Sunil ; Mehta, B. R. ; Kashyap, Subhash C. ; Chopra, K. L. (1988) Amorphous chalcogenide thin-film Schottky barrier (Bi/As2Se3:Bi) solar cell Applied Physics Letters, 52 (1). pp. 24-26. ISSN 0003-6951

Full text not available from this repository.

Official URL:

Related URL:


A thin-film metal-amorphous chalcogenide semiconductor Schottky barrier solar cell between Bi and n-type As2Se3:Bi has been fabricated by low-temperature diffusion of vacuum evaporated bismuth into a p-type a-As2Se3 film. The dominant current transport mechanism in the junction is established to be tunneling via recombination states. Typical open circuit voltage and short circuit current density of the solar cell are 300 mV and 140 μA/cm2, respectively.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:23211
Deposited On:25 Nov 2010 13:18
Last Modified:28 May 2011 04:59

Repository Staff Only: item control page