Shanthi, E. ; Banerjee, A. ; Dutta, V. ; Chopra, K. L. (1982) Electrical and optical properties of tin oxide films doped with F and (Sb+F) Journal of Applied Physics, 53 (3). pp. 1615-1621. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v53/i3/p1615_...
Related URL: http://dx.doi.org/10.1063/1.330619
Abstract
This paper presents the structural, electrical, and optical properties of F- and (Sb+F)-doped tin oxide films prepared by spray pyrolysis technique. Resistivity as low as 5.5×10-4 Ωcm with high optical transmission (≥80%) and high infrared reflection (∼90%) have been obtained in F-doped tin oxide films. The figure of merit ΦTC = T10/Rsh (52.6×10-3Ω-1 at 0.65μm) of these films is the highest amongst the results reported on doped tin oxide films. The variation of mobility with doping concentration has been analyzed to understand the electron-conduction mechanism. The Drude theory has been used to explain the optical properties near the plasma edge.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 23170 |
| Deposited On: | 25 Nov 2010 13:22 |
| Last Modified: | 28 May 2011 05:28 |
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