Voltage contrast imaging of barriers in ceramic semiconductors

Chopra, K. L. ; Bhushan, Bharat ; Kashyap, S. C. (1983) Voltage contrast imaging of barriers in ceramic semiconductors Journal of Applied Physics, 54 (3). pp. 1610-1612. ISSN 0021-8979

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Official URL: http://jap.aip.org/resource/1/japiau/v54/i3/p1610_...

Related URL: http://dx.doi.org/10.1063/1.332145


Potential barriers responsible for nonlinear conduction in ZnO ceramic semiconductors (cersems) have been observed by both the intensity and Y-modulation voltage contrast secondary electron microscopy techniques. The barriers exist at a grain-intergranular interface and extend into the conducting ZnO grains. The applied voltage is distributed uniformly across the barriers. No electrical shorting of the barriers has been observed at fields exceeding the breakdown.

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