R. F. power dependence of the Staebler-Wronski effect

Acharya, P. K. ; Malhotra, L. K. ; Chopra, K. L. (1988) R. F. power dependence of the Staebler-Wronski effect Thin Solid Films, 164 . pp. 233-237. ISSN 0040-6090

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/004060...

Related URL: http://dx.doi.org/10.1016/0040-6090(88)90141-1


The Staebler-Wronski effect has been investigated in glow-discharge-deposited hydrogenated amorphous silicon films (about 1 μm thick) grown at different r.f. powers. The samples, exposed to visible light of intensity 350 mW cm-2, showed a change, in both the activation energies for conduction and the pre-exponential factors. The activation energies changed from 0.83-1.05 eV in as-deposited annealed films to 1.03-1.15 eV for exposed films whereas the changes in the pre-exponential factors were from 5.0 × 104-4.3 × 107 Ω-1 cm-1 to 9.3 × 105-2.3 × 107 Ω-1 cm-1. Both of the constants for Meyer-Neldel rule also showed a change from 3.46 × 10-7 Ω-1 cm-1 and 30.91 eV-1 to 1.23 × 10-10 Ω-1 c-1 and 36.62 eV-1. The pre-exponential factors and the activation energies showed a peak for films deposited at 50 W and the rate of change of the density of dangling bonds with illumination time showed a minimum for the same film. The changes in dark conductivity and photoconductivities from the annealed to the exposed state were found to be at a maximum for samples deposited at 5 W.

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