Interaction of Mo/Ni and Mo/Co bilayer structures with silicon

Rastogi, R. S. ; Vankar, V. D. ; Chopra, K. L. (1991) Interaction of Mo/Ni and Mo/Co bilayer structures with silicon Thin Solid Films, 206 (1-2). pp. 34-39. ISSN 0040-6090

Full text not available from this repository.

Official URL:

Related URL:


The thin film interaction of Mo/Ni and Mo/Co bilayer structures was investigated in the temperature range 500-650 °C by Auger electron spectroscopy and glancing angle X-ray diffraction. It was observed that (i) the silicide formation temperature is lowered, (ii) the rate of silicon diffusion is enhanced and (iii) hindrance due to the natural SiOx layer is avoided by interposing a thin layer (approximately 100 Å) of nickel-cobalt between the molybdenum and silicon. The temperature of formation of MoSi2 (tetragonal phase) was found to be approximately 500-550 °C. The reaction mechanism and the role of the interlayer is discussed on the basis of various reaction temperatures and moving species (nickel, cobalt and silicon) during silicide formation.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:23027
Deposited On:25 Nov 2010 13:40
Last Modified:28 May 2011 04:39

Repository Staff Only: item control page