Kasiviswanathan, S. ; Srinivas, V. ; Kar, A. K. ; Mathur, B. K. ; Chopra, K. L. (1997) Scanning tunneling spectroscopy of indium tin oxide film in air Applied Surface Science, 115 (4). pp. 399-401. ISSN 0169-4332
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01694...
Related URL: http://dx.doi.org/10.1016/S0169-4332(97)00117-7
Abstract
Scanning tunneling spectroscopy investigations have been carried out on electron beam deposited indium tin oxide films in air. The spectroscopic data exhibit chatacteristics typical of metal-insulator-semiconductor structure, with a heavily doped semiconductor. The measurements have yielded a band gap of about 3.5 eV, which is very close to the bulk value.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 23025 |
| Deposited On: | 25 Nov 2010 13:40 |
| Last Modified: | 28 May 2011 04:19 |
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