Bhat, P. K. ; Das, S. R. ; Pandya, D. K. ; Chopra, K. L. (1979) Back illuminated high efficiency thin film Cu2S/CdS solar cells Solar Energy Materials, 1 (3-4). pp. 215-219. ISSN 0165-1633
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/016516...
Related URL: http://dx.doi.org/10.1016/0165-1633(79)90039-X
Abstract
Backwall Cu2S/CdS thin film solar cells of 10.4% conversion efficiency have been fabricated on SnOx:Sb coated glass substrates by an evaporation technique involving a solid state reaction to form the junction. The cells exhibit an open circuit voltage of 470-490 mV and a short circuit current density of ≈37 mA/cm2 under 100 mW/cm2 tungsten illumination. The carrier collection is enhanced as a result of a back surface n+/n junction formed at the SnOx/CdS interface.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 22985 |
| Deposited On: | 25 Nov 2010 13:44 |
| Last Modified: | 28 May 2011 08:50 |
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