Photo-electronic properties of solution-grown CdSe films

Kainthla, R. C. ; Pandya, D. K. ; Chopra, K. L. (1982) Photo-electronic properties of solution-grown CdSe films Solid State Electronics, 25 (1). pp. 73-76. ISSN 0038-1101

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Pure CdSe films have been deposited on glass substrates by a solution growth technique. Spectral distribution of refractive index (n) and absorption coefficient (α) has been calculated. The films have a direct energy gap of 1.74 eV. These films have been sensitized by heating in air, and maximum value of light to dark current ratio m~2 × 103 at 50 mW-cm-2 white light illumination has been obtained. The maximum peak of spectral sensitivity is at 0.7 μm. Trap density m1017-1018traps cm3 eV in the energy range 0.21-0.26 eV has been estimated. Properties of the sensitizing centres have been studied and are observed to be similar to those of single crystals.

Item Type:Article
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ID Code:22958
Deposited On:25 Nov 2010 13:46
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