Tiwari, A. N. ; Pandya, D. K. ; Chopra, K. L. (1987) Fabrication and analysis of all-sprayed CuInS2/ZnO solar cells Solar Cells, 22 (4). pp. 263-273. ISSN 0379-6787
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/037967...
Related URL: http://dx.doi.org/10.1016/0379-6787(87)90056-1
Abstract
CuInS2/ZnO solar cells of 2% efficiency with Voc = 280 mV, Isc = 13.3 mA cm-2 and FF = 0.38 were prepared by spray pyrolysis. The role of CuInS2 deposition parameters and the resistivity of CuInS2 and ZnO films in the formation of efficient junctions was studied. Maximum efficiency was obtained for indium-doped ZnO films with an [In]/[Zn] atomic concentration ratio of 0.03 and CuInS2 films deposited with 12% excess copper in spray solution. Deposition of an interlayer of CuInS2 and post-deposition annealing of junctions are essential for obtaining good quality solar cells. Multistep tunnelling and recombination is the most likely mode of carrier transport in CuInS2/ZnO heterojunctions.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 22942 |
| Deposited On: | 25 Nov 2010 13:48 |
| Last Modified: | 28 May 2011 05:01 |
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