High energy oxygen ion induced modifications in lead based perovskite thin films

Jali, V. M. ; Angadi, Basavaraj ; Venkateswarlu, P. ; Kumar, Ravi ; Krupanidhi, S. B. (2007) High energy oxygen ion induced modifications in lead based perovskite thin films Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 260 (2). pp. 553-562. ISSN 0168-583X

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S01685...

Related URL: http://dx.doi.org/10.1016/j.nimb.2007.04.126


The lead based ferroelectric PbZr0.53Ti0.47O3 (PZT), (Pb0.90La0.10)TiO3 (PLT10) and (Pb0.80La0.20)TiO3 (PLT20) thin films, prepared by pulsed laser ablation technique, were studied for their response to the 70 MeV oxygen ion irradiation. The dielectric analysis, capacitance-voltage (C-V) and DC leakage current measurements were performed before and after the irradiation to high-energy oxygen ions. The irradiation produced considerable changes in the dielectric, C-V, leakage characteristics and induced some amount of amorphization. The PZT films showed partial recrystallization after a thermal annealing at 400 °C for 10 min. The phase transition temperature [Tc] of PLT20 increased from 115 °C to 120 °C. The DC conductivity measurements showed a shift in the onset of non-linear conduction region. The current density decreased by two orders of magnitude after irradiation. After annealing the irradiated films at a temperature of 400 °C for 10 min, the films partially regained the dielectric and electrical properties. The results are discussed in terms of the irradiation-induced amorphization, the pinning of the ferroelectric domains by trapped charges and the thermal annealing of the defects generated during the irradiation.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Ferroelectric Thin Films; Lead Based Perovskites; High Energy Oxygen Irradiation
ID Code:19460
Deposited On:22 Nov 2010 12:33
Last Modified:17 Jul 2012 05:37

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