Saha, S. ; Krupanidhi, S. B. (2001) Large reduction of leakage current by graded-layer La doping in (Ba0.5,Sr0.5)TiO3 thin films Applied Physics Letters, 79 (1). pp. 111-113. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v79/i1/p111_s...
Related URL: http://dx.doi.org/10.1063/1.1371791
Abstract
A large reduction in the leakage current behavior in (Ba,Sr)TiO3 (BST) thin films was observed by graded-layer donor doping. The graded doping was achieved by introducing La-doped BST layers in the grown BST films. The films showed a large decrease (about six orders of magnitude) in the leakage current in comparison to undoped films at an electric field of 100 kV/cm. The large decrease in leakage current was attributed to the formation of highly resistive layers, originating from compensating defect chemistry involved for La-doped films grown in oxidizing environment. Temperature-dependent leakage-current behavior was studied to investigate the conduction mechanism and explanations of the results were sought from Poole-Frenkel conduction mechanism.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 19286 |
| Deposited On: | 23 Nov 2010 13:12 |
| Last Modified: | 06 Jun 2011 09:18 |
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