High energy oxygen ion induced modifications in ferroelectric SrBi2Ta2O9 thin films

Jali, V. M. ; Angadi, Basavaraj ; Lagare, M. T. ; Victor, P. ; Kumar, Ravi ; Krupanidhi, S. B. (2005) High energy oxygen ion induced modifications in ferroelectric SrBi2Ta2O9 thin films Ferroelectrics, 328 (1). pp. 103-109. ISSN 0015-0193

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Related URL: http://dx.doi.org/10.1080/00150190500311367


The effects of high energy oxygen ion irradiation on the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films are reported. The films were grown using pulsed laser ablation. Fluence dependant degradation in the ferroelectric properties was observed. The dielectric constant did not show any frequency dispersion in both the unirradiated and irradiated films. After irradiation, the films showed only a decrease in the capacitance value retaining their ferroelectric nature. The switching voltages increased with broader peaks and showed a partial recovery after annealing of the irradiated film. A slim hysteresis loop with decreased Ps, Pr and Ec values was observed. The current density increased to a larger extent. The decrease in the dielectric constant, capacitance and polarization values was to a lesser extent as compared to those of PZT thin films under identical irradiation conditions. The results presented in this paper are illustrative of the fact that the layered perovskites have a stable structure and are less sensitive to extrinsic effects. The relatively high resistance of bismuth layered perovskites such as SBT to the high energy radiation along with the greater fatigue endurance as compared to PZT make them better candidates for applications in memory devices.

Item Type:Article
Source:Copyright of this article belongs to Taylor and Francis Ltd.
Keywords:Ferroelectric Properties; Ion Bombardment; Phase Transitions and Laser Ablation
ID Code:19200
Deposited On:23 Nov 2010 13:20
Last Modified:06 Jun 2011 04:32

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