Bharadwaja, S. S. N. ; Krupanidhi, S. B. (2001) Antiferroelectric thin films for MEMs applications Ferroelectrics, 263 (1). pp. 39-44. ISSN 0015-0193
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Official URL: http://www.informaworld.com/smpp/content~db=all~co...
Related URL: http://dx.doi.org/10.1080/00150190108225176
Abstract
Antiferroelectric compositions have many potential applications in energy conversion and microelectromechanical systems. Electric field induced phase transitions between ferroelectric and antiferroelectric phases were studied in antiferroelectric lead zirconate and modified lead zirconate titanate stannate family thin films for various smart system applications. Thin films of various antiferroelectric thin film compositions such as PbZrO3, Nb-and La-modified Lead Zirconate Titanate Stannate were processed by pulsed excimer laser ablation technique. Dielectric, hysteresis, pyroelectric and switching properties were studied in detail for a new generation of functional materials. A comparative study of functional properties is presented with these antiferroelectric compositions in comparison with the conventional ferroelectric compositions.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Taylor and Francis Ltd. |
| Keywords: | Antiferroelectric Thin Films; Pulsed Excimer Laser Ablation; Electric Field Induced Phase Switching |
| ID Code: | 19188 |
| Deposited On: | 23 Nov 2010 13:21 |
| Last Modified: | 06 Jun 2011 08:32 |
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