Negative differential resistance in GaN nanocrystals above room temperature

Chitara, Basant ; Jebakumar, D. S. Ivan ; Rao, C. N. R. ; Krupanidhi, S. B. (2009) Negative differential resistance in GaN nanocrystals above room temperature Nanotechnology, 20 (40). 405205_1-405205_4. ISSN 0957-4484

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Official URL: http://iopscience.iop.org/0957-4484/20/40/405205

Related URL: http://dx.doi.org/10.1088/0957-4484/20/40/405205

Abstract

Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is ~7 V above room temperature.

Item Type:Article
Source:Copyright of this article belongs to Institute of Physics Publishing.
ID Code:19184
Deposited On:23 Nov 2010 18:51
Last Modified:04 Jun 2011 16:32

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