Late, Dattatray J. ; Ghosh, Anupama ; Subrahmanyam, K. S. ; Panchakarla, L. S. ; Krupanidhi, S. B. ; Rao, C. N. R. (2010) Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes Solid State Communications, 150 (15-16). pp. 734-738. ISSN 0038-1098
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...
Related URL: http://dx.doi.org/10.1016/j.ssc.2010.01.030
Abstract
Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n-type behaviour with all the few-layer graphenes, the best characteristics being found with the graphene possessing 2-3 layers prepared by arc-discharge of graphite in hydrogen. FETs based on boron and nitrogen doped graphene show n-type and p-type behaviour respectively.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Graphene; A. Field-effect Transistor; D. Mobility; D. Doping |
| ID Code: | 19179 |
| Deposited On: | 23 Nov 2010 13:22 |
| Last Modified: | 04 Jun 2011 10:27 |
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