Electrical switching in single crystal VO2

Mansingh, Abhai ; Singh, Ramadhar ; Krupanidhi, S. B. (1980) Electrical switching in single crystal VO2 Solid-State Electronics, 23 (6). pp. 649-654. ISSN 0038-1101

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003811...

Related URL: http://dx.doi.org/10.1016/0038-1101(80)90050-7

Abstract

I-V characteristics of single crystal vanadium dioxide has been measured using a constant current source in the ambient temperature region 220-325° K. The temperature of the crystal surface has also been measured. It is observed that the switching voltage (Vth) increases but the current at switching (Ith) decreases with decreasing temperature, giving a temperature independent threshold power (Vth × Ith). At switching, the temperature of the crystal surface increases only by 3-6° K above ambient for different ambient temperatures. These results can be qualitatively explained by assuming that a filament (channel) is formed before switching. The switching occurs when the temperature of this filament of finite width approaches the semiconductor-metal transition temperature. The initial width of the channel at switching decreases with decreasing temperature and at a given ambient temperature the channel width increases with increasing current in the post breakdown region.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:19148
Deposited On:23 Nov 2010 18:55
Last Modified:06 Jun 2011 17:12

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