Photoenhanced chemical-vapor deposition of BaTiO3

Zhang, Jiming ; Beetz, Charles P. ; Krupanidhi, S. B. (1994) Photoenhanced chemical-vapor deposition of BaTiO3 Applied Physics Letters, 65 (19). pp. 2410-2412. ISSN 0003-6951

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High quality BaTiO3 films have been deposited on MgO (100) and Pt coated Si (Pt/Ta/ONO/Si) substrates at 600° C by photoenhanced chemical-vapor deposition (photo-CVD). X-ray-diffraction measurements show that highly a-axis oriented BaTiO3 was formed on MgO (100) substrates at 600° C by photo-CVD. BaTiO3 films deposited on Pt coated Si substrates by photo-CVD were randomly oriented. In contrast, the x-ray-diffraction peaks of the BaTiO3 films deposited at the same temperature without UV light irradiation were much weaker than those with UV light irradiation. Raman-scattering measurements showed a pronounced peak at 522 cm-1, which is characteristic peak of perovskite BaTiO3, for photo-CVD deposited films. The dielectric constant of photo-CVD deposited BaTiO3 films (ε=580) was more than double than that of thermal CVD deposited films, while the dissipation factor (loss) of photo-CVD deposited BaTiO3 films was reduced by a factor of 2. These results unambiguously demonstrated that photo-CVD is a promising technique for low-temperature deposition of high quality ferroelectric films.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:19140
Deposited On:23 Nov 2010 13:26
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