I-V and C-V studies of evaporated amorphous arsenic telluride film on crystalline silicon

Krupanidhi, S. B. ; Srivastava, R. K. ; Srinivas, K. ; Bhattacharya, D. K. ; Mansingh, Abhai (1983) I-V and C-V studies of evaporated amorphous arsenic telluride film on crystalline silicon Journal of Applied Physics, 54 (3). pp. 1383-1389. ISSN 0021-8979

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Official URL: http://jap.aip.org/resource/1/japiau/v54/i3/p1383_...

Related URL: http://dx.doi.org/10.1063/1.332162


The I-V characteristics of amorphous arsenic telluride (As2Te3) thin film on single-crystalline silicon substrates exhibit similarity with the characteristics of a heterojunction formed between crystalline semiconductors and the carrier transport, which involves more than one conduction mechanism at the interface. The recombination, tunnelling, and space-charge-limited carrier transport takes place at the interface successively, depending on the magnitude of the applied voltage. The heterojunction properties dominate at lower voltages (below 1 V), while at the higher voltages, the I-V characteristic is determined by the As2Te3 film. The temperature-dependent I-V characteristics confirm the formation of a heterojunction at the silicon-As2Te3 (film) interface. The built-in potential evaluated from the I-V characteristics (~0.2 V) agrees well with the observed open-circuit photovoltage Voc. Contrary to the I-V characteristics, the C-V characteristics resemble the characteristics of a conventional metal-insulator-semiconductor (MIS) structure. This can be qualitatively explained by assuming the heterojunction to have a low breakdown potential (~1.0 V), and the junction barrier capacitance in the breakdown region to be higher than either the film or the depletion capacitance.

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