Study of pulsed laser ablated CaBi2Ta2O9 thin films

Das, Rasmi R. ; Perez, W. ; Katiyar, Ram S. ; Krupanidhi, S. B. (2001) Study of pulsed laser ablated CaBi2Ta2O9 thin films Solid State Communications, 119 (3). pp. 127-131. ISSN 0038-1098

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...

Related URL: http://dx.doi.org/10.1016/S0038-1098(01)00234-4

Abstract

Polycrystalline CaBi2Ta2O9 thin films were grown on Pt/TiO2/SiO2/Si (100) substrates using a pulsed laser deposition technique. The influence of substrate temperature and oxygen pressure on crystallization and orientation of the films was studied. In-situ films deposited under a combination of higher substrate temperature and lower oxygen pressure exhibited a preferred c-axis orientation. Micro-Raman spectroscopy was used for complete understanding of phase evolution of CBT films. Thin films deposited at higher substrate temperatures showed larger grain size and higher surface roughness, observed by atomic force microscopy. The values of maximum polarization (2Pm~13.4 µ C/cm2), remanent polarization (2Pr~4.6 µ C/cm2) and the coercive field Ec was about 112 kV/cm obtained for the film deposited at 650° C and annealed at 750° C. The room temperature, dielectric data revealed a dependence on the grain size.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:A. Ferroelectrics; A. Thin Films; D. Dielectric Response
ID Code:19115
Deposited On:25 Nov 2010 14:18
Last Modified:06 Jun 2011 06:00

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