Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Krupanidhi, S. B. ; Rao, G. Mohan (1994) Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications Thin Solid Films, 249 (1). pp. 100-108. ISSN 0040-6090

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/004060...

Related URL: http://dx.doi.org/10.1016/0040-6090(94)90093-0

Abstract

Polycrystalline strontium titanate (SrTiO3) films were prepared by a pulsed laser deposition technique on p-type silicon and platinum-coated silicon substrates. The films exhibited good structural and dielectric properties which were sensitive to the processing conditions. The small signal dielectric constant dissipation factor at a frequency of 100 kHz were about 225 and 0.03 respectively. The capacitance-voltage (C-V) characteristics in metal-insulator- semiconductor structures exhibited anomalous frequency dispersion behavior and a hysteresis effect. The hysteresis in the C-V curve was found to be about 1 V and of a charge injection type. The density of interface states was about 1.79 × 1012 cm-2. The charge storage density was found to be 40 fC µ m-2 at an applied electric field of 200 kV cm-1. Studies on current-voltage characteristics indicated an ohmic nature at lower voltages and space charge conduction at higher voltages. The films also exhibited excellent time-dependent dielectric breakdown behavior.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
ID Code:19107
Deposited On:25 Nov 2010 14:19
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