dc leakage behavior in vanadium-doped bismuth titanate thin films

Abstract

The dc leakage current behavior and its thickness dependence in vanadium-doped bismuth titanate thin films have been investigated over a wide range of temperatures. The leakage current behavior was explained on the basis of space-charge-limited conduction theory. The current density, calculated from the I-V characteristics, was found to be 2.01× 10^-9 A/cm² at an applied field of 2.9 KV/cm at room temperature. Three distinct regions were observed in the I-V plot which were attributed to the Ohmic region, trap-filled limit, and Child's law. The influence of the film thickness on the dc leakage current conduction was found to be matching with that predicted by Lampert's theory [Phys. Rev. 103, 1648 (1956)] of space-charge-limited conduction.