dc leakage behavior in vanadium-doped bismuth titanate thin films

Chaudhuri, Ayan Roy ; Krupanidhi, S. B. (2005) dc leakage behavior in vanadium-doped bismuth titanate thin films Journal of Applied Physics, 98 (9). 094112_1-094112_6. ISSN 0021-8979

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Official URL: http://jap.aip.org/resource/1/japiau/v98/i9/p09411...

Related URL: http://dx.doi.org/10.1063/1.2128476


The dc leakage current behavior and its thickness dependence in vanadium-doped bismuth titanate thin films have been investigated over a wide range of temperatures. The leakage current behavior was explained on the basis of space-charge-limited conduction theory. The current density, calculated from the I-V characteristics, was found to be 2.01× 10-9 A/cm2 at an applied field of 2.9 KV/cm at room temperature. Three distinct regions were observed in the I-V plot which were attributed to the Ohmic region, trap-filled limit, and Child's law. The influence of the film thickness on the dc leakage current conduction was found to be matching with that predicted by Lampert's theory [Phys. Rev. 103, 1648 (1956)] of space-charge-limited conduction.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:19105
Deposited On:25 Nov 2010 14:19
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