Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films

Parui, Jayanta ; Krupanidhi, S. B. (2008) Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films Applied Physics Letters, 92 (19). 192901_1-192901_3. ISSN 0003-6951

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Official URL: http://apl.aip.org/resource/1/applab/v92/i19/p1929...

Related URL: http://dx.doi.org/10.1063/1.2928230

Abstract

Antiferroelectric lanthanum-modified PbZrO3 thin films with La contents between 0 and 6 at.% have been deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel route. On the extent of La-modification, maximum polarization (Pmax) and recoverable energy density (W) have been enhanced followed by their subsequent reduction. A maximum Pmax (~0.54 C/m2 at ~60 MV/m) as well as a maximum W (~14.9 J/cc at ~60 MV/m) have been achieved on 5% La modification. Both Pmax and W have been found to be strongly dependent on La-induced crystallographic orientations.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
ID Code:19100
Deposited On:25 Nov 2010 14:19
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