Electrical properties of La-graded heterostructure of Pb1-xLaxTiO3 thin films

Bhaskar, S. ; Majumder, S. B. ; Das, R. R. ; Dobal, P. S. ; Katiyar, R. S. ; Krupanidhi, S. B. (2001) Electrical properties of La-graded heterostructure of Pb1-xLaxTiO3 thin films Materials Science and Engineering B, 86 (2). pp. 172-177. ISSN 0921-5107

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S09215...

Related URL: http://dx.doi.org/10.1016/S0921-5107(01)00684-5

Abstract

La-graded heterostructure films were prepared by sol-gel technique on platinum substrates and electrical properties of these films were compared with those of conventional thin films of similar compositions. X-ray diffraction results indicate the pure perovskite polycrystalline structure of these films. Atomic Force Microscopy analysis revealed a finer grain size and relatively lower surface roughness. Relatively higher values of Pm and Pr (69 and 38 μC cm-2, respectively) and excellent dielectric properties with lower loss (K=1900, tan δ =0.035 at 100 kHz) were observed for La-graded heterostructure films. Also lower leakage current density (~2.5 nA cm-2) and a higher onset field (~50 kV cm-1) of space charge conduction indicated higher breakdown strength and good leakage current characteristics. The ac electric field dependence of the permittivity at sub-switching fields was analyzed in the framework of the Rayleigh dynamics of domain walls. The estimated irreversible domain wall displacement contribution to the total dielectric permittivity was 17 and 9% for conventional 15 at.% La doped PbTiO3 and La-graded heterostructure films, respectively. The improved dielectric and polarization behavior of La-graded heterostructure films may be attributed to homogenous dopant distribution compared to the conventional 15 at.% La doped PbTiO3 films.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Dielectric; Lead Lanthanum Titanate; Ferroelectric Materials
ID Code:19084
Deposited On:25 Nov 2010 14:24
Last Modified:06 Jun 2011 05:59

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