Study of La-modified antiferroelectric PbZrO3 thin films

Bharadwaja, S. S. N. ; Krupanidhi, S. B. (2003) Study of La-modified antiferroelectric PbZrO3 thin films Thin Solid Films, 423 (1). pp. 88-96. ISSN 0040-6090

Full text not available from this repository.

Official URL:

Related URL:


Dielectric and DC electrical properties of antiferroelectric lead zirconate and La-doped lead zirconate thin films deposited using a pulsed excimer-laser ablation technique were studied in detail. Increased La dopant concentration in pure lead zirconate thin films reduced the dielectric maximum and Curie temperature. At 9 mol.% of La in pure lead zirconate, the dielectric transition temperature reduced to room temperature. A gradual change from antiferroelectric to paraelectric through ferroelectric phases was observed with the addition of La to pure lead zirconate. The DC electrical properties of pure lead zirconate and the effect of donor addition on leakage current properties were studied. Correlation between the macroscopic changes observed in the charge transport mechanisms, microscopic defect chemistry and charge-carrier trapping phenomenon was examined in detail.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Lead Zirconate; Electrical Properties and Measurements; Dielectric Properties
ID Code:19078
Deposited On:25 Nov 2010 14:24
Last Modified:06 Jun 2011 04:49

Repository Staff Only: item control page