Electrical properties of ferroelectric YMnO3 films deposited on n-type Si(111) substrates

Parashar, S. ; Raju, A. R. ; Rao, C. N. R. ; Victor, P. ; Krupanidhi, S. B. (2003) Electrical properties of ferroelectric YMnO3 films deposited on n-type Si(111) substrates Journal of Physics D: Applied Physics, 36 (17). pp. 2134-2140. ISSN 0022-3727

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Official URL: http://iopscience.iop.org/0022-3727/36/17/317

Related URL: http://dx.doi.org/10.1088/0022-3727/36/17/317

Abstract

YMnO3 thin films were grown on an n-type Si substrate by nebulized spray pyrolysis in the metal-ferroelectric-semiconductor (MFS) configuration. The capacitance-voltage characteristics of the film in the MFS structure exhibit hysteretic behaviour consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of the interface states decreases with increasing annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current, measured in the accumulation region, is lower in well-crystallized thin films and obeys a space-charge limited conduction mechanism. The calculated activation energy from the dc leakage current characteristics of the Arrhenius plot reveals that the activation energy corresponds to oxygen vacancy motion.

Item Type:Article
Source:Copyright of this article belongs to Institute of Physics Publishing.
ID Code:19068
Deposited On:25 Nov 2010 19:55
Last Modified:06 Jun 2011 10:20

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