Roy, D. ; Krupanidhi, S. B. ; Dougherty, J. P. (1992) Excimer laser ablation of ferroelectric Pb(Zr,Ti)O3 thin films with low pressure direct-current glow discharge Journal of Vacuum Science & Technology A Vacuum, Surfaces, and Films, 10 (4). pp. 1827-1831. ISSN 0734-2101
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Official URL: http://link.aip.org/link/?JVTAD6/10/1827/1
Related URL: http://dx.doi.org/10.1116/1.577754
Abstract
Thin films of Pb(Zr,Ti)O3 (PZT) were deposited on platinum coated silicon and bare silicon by excimer laser (248 nm) ablation and were in situ crystallized, with and without oxygen discharge. Films deposited at various oxygen discharge voltages exhibited variations in polarization switching, dielectric constant and loss, I-V characteristics and growth temperature as well. Crystalline perovskite PZT films deposited with 300 V discharge offered stoichiometric and crystalline films, with a dielectric constant of 850, a remanent polarization of 22 µ C/cm2 and a coercive field of 40 kV/cm and a resistivity of about 1013 Ωcm. Besides the property enhancement, the presence of the O+2 discharge plasma appeared to have reduced the growth temperature to lower values.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Vacuum Society. |
| ID Code: | 19056 |
| Deposited On: | 25 Nov 2010 14:32 |
| Last Modified: | 06 Jun 2011 12:00 |
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