Dielectric properties of La-modified antiferroelectric PbZrO3 thin films

Bharadwaja, S. S. N. ; Saha, S. ; Bhattacharyya, S. ; Krupanidhi, S. B. (2002) Dielectric properties of La-modified antiferroelectric PbZrO3 thin films Materials Science and Engineering B, 88 (1). pp. 22-25. ISSN 0921-5107

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S09215...

Related URL: http://dx.doi.org/10.1016/S0921-5107(01)00744-9


Lead zirconate is a room temperature antiferroelectric material, which exhibits double polarization hysteresis characteristic in the presence of external field. A transformation from antiferroelectric to paraelectric behavior through a ferroelectric phase has been exhibited upon addition of La-to pure lead zirconate thin films, which were confirmed from dielectric, hysteresis and pyroelectric and micro Raman analyses. Thin films of pure and La-modified lead zirconate were processed using A-site vacancy formula Pb(l-1.5x)LaXZrO3 by pulsed excimer laser ablation technique. Pyroelectric coefficient increased gradually from 55 to 190 µC cm-2 K-1 with the addition of 0 to 9 mole% of La to pure lead zirconate. The transition temperature has been reduced to room temperature (~34 °C) with addition of a 9 mole% of La-to lead zirconate. Presence of antiferroelectricity in pure lead zirconate thin films is due to antiparallel shifts of Pb-ions in (110) direction and reduction of transition temperature is attributed to creation of A-site vacancies would have caused enhancing of ferro-and paraelectric behavior with La-addition.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Antiferroelectric Lead Zirconate; Micro Raman Spectra and Pyroelectric Measurements; Thin Films
ID Code:19021
Deposited On:25 Nov 2010 14:35
Last Modified:06 Jun 2011 06:16

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