Hudait, Mantu Kumar ; Krupanidhi, S. B. (2000) Atomic force microscopic study of surface morphology in Si-doped epi-GaAs on Ge substrates: effect of off-orientation Materials Research Bulletin, 35 (6). pp. 909-919. ISSN 0025-5408
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00255...
Related URL: http://dx.doi.org/10.1016/S0025-5408(00)00278-6
Abstract
The Si-doped GaAs/Ge heterostructures have been grown under different growth conditions by low-pressure metal-organic vapor-phase epitaxial technique and investigated by atomic force microscopy (AFM). Our results indicate that the 6° offcut Ge substrate coupled with a growth temperature of ~675° C, growth rate of ~3 µ m/h and a V/III ratio of ~88 are optimum set of growth conditions for the buffer layer growth of GaAs/Ge heterostructure solar cell. The surface morphology was found to be very good on 6° off-oriented Ge substrate and the root mean square (rms) roughness was approximately 3.8 nm over 3 × 3 µm2 area scan compared to 2° and 9° off-oriented Ge substrates.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Semiconductors; A. Thin Films; B. Epitaxial Growth; C. Atomic Force Microscopy |
| ID Code: | 19000 |
| Deposited On: | 25 Nov 2010 14:37 |
| Last Modified: | 06 Jun 2011 09:45 |
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